| PART |
Description |
Maker |
| UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| M2V64S40BTP-8L M2V64S20BTP M2V64S20BTP-10 M2V64S20 |
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HY57V12820LT-P |
64M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| M5M4V64S30ATP-8A M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| EBS52UC8APFA-7A EBS52UC8APFA EBS52UC8APFA-75 |
512MB Unbuffered SDRAM DIMM 64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
| HYB39S256407FF-7 |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 0.400 X 0.875 INCH, 0.80 MM PITCH, GREEN, PLASTIC, TSOP2-54
|
Infineon Technologies AG
|
| HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life
64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
| HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
